Samsung Electronics (005970 KS) is reportedly planning to utilise the NRD-K Line 2 in Giheung as a foundry line, instead of its existing R&D purpose, ZDNet reports

• Report adds that the 2nm base die for HBM is the primary product under consideration for mass production.

Repurposing an R&D line for volume production is the kind of move that typically signals a capacity or yield inflection: foundry operators have historically converted pilot lines only when a process node is considered ready enough, or demand firm enough, to justify pulling engineering wafers off the schedule. The product detail is the more telling element. HBM base dies on an advanced logic node is where the memory and foundry businesses intersect, and Samsung has previously pursued exactly this integration as a differentiator against pure-play foundry rivals and against memory peers that source logic dies externally. The channel runs through HBM competitiveness: qualification with the major AI accelerator customers tends to be the gating step, and base-die capability has been a recurring sticking point in past qualification cycles. Worth watching is whether this is confirmed as customer-driven capacity rather than speculative build-out, any read-across to the HBM roadmap of the memory peer set, and follow-on reporting on yield and client qualification timelines. As an unconfirmed single-source report, positioning rather than a settled fact.